Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering
Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering
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DOI：
10.1016/j.vacuum.2008.04.014
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发表时间：
2008-10-15
期刊：
影响因子：
4
通讯作者：
Baba, Shigeru
中科院分区：
文献类型：
--
作者：
Nakano, Takeo;Hoshi, Ken'ichiroh;Baba, Shigeru
研究了基础压力对氧掺入反应磁控溅射金属氮化物薄膜的影响。使用基础压力小于10(-6) Pa的UHV溅射系统来研究故意引入的氧气背景压力与溅射沉积的TiN薄膜中测量的氧含量之间的关系。结果表明，在氧分压为10(-4)Pa的情况下，通过X射线光电子能谱(XPS)技术测量，发现沉积的TiN含有10-20at.％的氧。当没有氧气进入系统时，在沉积的 TiN 薄膜中检测不到氧气的痕迹。根据 O(2) 和 N(2) 在 Ti 金属表面上的覆盖率依赖性粘附概率讨论了掺入机制。 (C) 2008 年，爱思唯尔有限公司出版。
The effect of the base pressure on the incorporation of oxygen into reactively magnetron-sputtered metal-nitride films has been investigated. A UHV sputtering system with a base pressure of less than 10(-6) Pa was used to examine the relationship between a deliberately introduced background pressure of oxygen and a measured oxygen content in the sputter-deposited TiN films. The results showed that with an oxygen partial pressure of 10(-4) Pa, the deposited TiN was found to include 10-20 at.% of oxygen when measured by the technique of X-ray photoelectron spectroscopy (XPS). When no oxygen was admitted into the system, no trace of oxygen could be detected in the deposited TiN films. The incorporation mechanism is discussed in terms of the coverage-dependent sticking probabilities of O(2) and N(2) on a Ti metal surface. (C) 2008 Published by Elsevier Ltd.