Compact Model of Carrier Transport in Monolayer Transition Metal Dichalcogenide Transistors
Compact Model of Carrier Transport in Monolayer Transition Metal Dichalcogenide Transistors
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DOI：
10.1109/ted.2018.2866095
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发表时间：
2019
影响因子：
3.1
通讯作者：
Tong Wu;Xi Cao;Jing Guo
中科院分区：
文献类型：
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作者：
Tong Wu;Xi Cao;Jing Guo
单层二维过渡金属二硫属化物 (TMDC) 场效应晶体管 (FET) 由于极薄的体和减少的量子力学隧道效应而具有出色的缩放特性。高场和弹道载流子传输可以在大规模 TMDC FET 中发挥重要作用。开发了一个紧凑模型来描述基于 TMDC 材料的二维单层 FET 中的载流子传输。该模型具有以下特点：1）处理高场输运和速度饱和； 2）它可以应用于从弹道到准弹道再到扩散传输体系； 3) 基于检查 TMDC 材料中的物理载流子散射机制，它结合了载流子迁移率值的解析表达式。蒙特卡罗模拟随机求解玻尔兹曼输运方程，用于验证模型。载流子传输模型进一步与虚拟源模型集成，以计算 2D 单层 FET 的 ${I}$ – ${V}$ 特性。基于该模型，讨论了声子散射和电离杂质散射对平均载流子注入速度和晶体管弹道性的影响。
Monolayer 2-D transition metal dichalcogenide (TMDC) field-effect transistors (FETs) have excellent scaling properties due to an extremely thin body and reduced quantum-mechanical tunneling. High-field and ballistic carrier transport can play an important role in aggressively scaled TMDC FETs. A compact model is developed to describe carrier transport in 2-D monolayer FETs based on a TMDC material. The model has the following features: 1) it treats high-field transport and velocity saturation; 2) it can be applied from ballistic to quasi-ballistic to diffusive transport regimes; and 3) it incorporates analytical expressions for carrier mobility values based on examining physical carrier scattering mechanisms in TMDC materials. Monte Carlo simulation, which solves the Boltzmann transport equation stochastically, is used to validate the model. The carrier transport model is further integrated with a virtual-source model to calculate the ${I}$ – ${V}$ characteristics of 2-D monolayer FETs. Based on the model, the effects of phonon scattering and ionized impurity scattering on the average carrier injection velocity and transistor ballisticity are discussed.