Modeling the Hysteresis Power Losses of the Output Parasitic Capacitance in Super Junction MOSFETs

Modeling the Hysteresis Power Losses of the Output Parasitic Capacitance in Super Junction MOSFETs
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DOI:
10.1109/speedam.2018.8445347
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发表时间:
2018-06
期刊:
2018 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM)
影响因子:
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通讯作者:
A. Raciti;S. Rizzo;N. Salerno;G. Susinni;R. Scollo;Alfio Scuto
A. Raciti;S. Rizzo;N. Salerno;G. Susinni;R. Scollo;Alfio Scuto
中科院分区:
其他
文献类型:
--
作者:
A. Raciti;S. Rizzo;N. Salerno;G. Susinni;R. Scollo;Alfio Scuto

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功率转换器中的高开关频率允许使用小尺寸无源元件,这反过来意味着高密度(kW/kg)功率转换。采用超级结技术制造的硅MOSFET是实现超高密度转换器的另一个特点。增加的开关频率和功率密度的并发因素可能导致要面对的热问题。为了降低总的功率损耗,采用软开关技术,以大幅降低开关功率损耗,从而提高效率。超结(SJ)MOSFET在基于软开关的转换方案中的应用已经揭示了由于MOSFET的寄生输出电容Coss中的介电滞后现象引起的意外功率损耗。在这方面,实验证据已经证明,市场上可用的设备之间存在非常大的性能差异。本文研究了Coss功率损耗的实验测量,建模和模拟的PSpice包。所提出的模型是一个非线性电阻,其平均值等于等效串联电阻计算从实验磁滞回线(Q-V特性)和相关的功率损耗在给定的开关频率。
High switching frequencies in power converters allow to use small-size passive components that, in turn, means high-density (kW/kg) power conversion. The use of silicon MOSFETs manufactured with super junction technology is an additional feature towards the achievement of very high-density converters. The concurrent factors of increased switching frequency and power density may lead to thermal issues to be faced. Aiming to reduce the overall power losses, soft switching techniques are adopted to reduce dramatically the switching power losses, thus increasing the efficiency. The application of super junction (SJ) MOSFETs in soft-switching based conversion schemes has revealed unexpected power losses due to the dielectric hysteresis phenomenon into the parasitic output capacitance Coss of the MOSFET. In this respect, the experimental evidence has proved that there is a very large performance difference among the devices available into the market. This paper studies the Coss power losses that have been experimentally measured, modeled and simulated by a PSpice package. The proposed model is a nonlinear resistor whose average value is equal to the equivalent series resistance calculated from the experimental hysteresis loop (Q- V characteristic) and the related power losses at a given switching frequency.