Two-step growth of high-quality GaN by hydride vapor-phase epitaxy
Two-step growth of high-quality GaN by hydride vapor-phase epitaxy
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DOI：
10.1063/1.1311600
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发表时间：
2000-09
影响因子：
4
通讯作者：
P. R. Tavernier;E. Etzkorn;Y. Wang;D. Clarke
中科院分区：
文献类型：
--
作者：
P. R. Tavernier;E. Etzkorn;Y. Wang;D. Clarke
证明了使用由氢化物气相外延（HVPE）形成的GaN低温层作为模板来生长高质量的HVPE膜。使用通过在550 °C下使GaCl和NH3反应并在1050 °C的生长温度下退火而形成的层，可以通过HVPE生长GaN的厚膜，其中每平方厘米具有少于IO8个位错。通过高分辨率X射线衍射、原子力显微镜台阶终止密度和平面透射电子显微镜测量的位错密度显示，23 μm薄膜的位错密度为106 ×107 cm−2。获得高质量的单晶特征膜被认为是依赖于几个因素，最重要的是，温度上升到生长温度和层厚度的速率。
The use of a low-temperature layer of GaN formed by hydride vapor-phase epitaxy (HVPE) as a template to grow high-quality HVPE films is demonstrated. Using layers formed by reacting GaCl and NH3 at 550 °C and annealed at a growth temperature of 1050 °C, thick films of GaN can be grown by HVPE with fewer than 108 dislocations per cm2. Dislocation densities measured by high-resolution x-ray diffraction, atomic-force microscopy step termination density and plan-view transmission electron miscroscopy reveal that ∼23 μm films have dislocation densities of ∼6×107 cm−2. Obtaining high-quality single-crystal character films was found to be dependent on several factors, most importantly, the rate of temperature increase to growth temperature and the layer thickness.