High-rate etching of single oriented AlN films by chlorine-based inductive coupled plasma for vibrational energy harvesters
High-rate etching of single oriented AlN films by chlorine-based inductive coupled plasma for vibrational energy harvesters
复制标题
用于振动能量收集器的氯基感应耦合等离子体对单向 AlN 薄膜进行高速蚀刻
DOI：
10.1088/1742-6596/1407/1/012067
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
H. Kuwano
中科院分区：
文献类型：
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作者：
H. Nguyen;L. Van Minh;H. Kuwano
本文介绍了我们利用基于氯的感应耦合等离子体（ICP）以及镍薄膜作为硬掩模，对完全（0002）取向的氮化铝薄膜开发的一种高速率蚀刻工艺。系统地研究了蚀刻特性（蚀刻速率、选择性）对各种参数（蚀刻功率、压力和气体混合比）的影响。我们实现了723纳米/分钟的蚀刻速率，这是针对单一取向氮化铝所达到的最高值。在本报告中，蚀刻选择性得到了优化，达到了约11。X射线光电子能谱测量（XPS）提供了对蚀刻过程的深入理解，并首次揭示了氯对氮化铝的蚀刻机制。
This paper presents our development of a high-rate etching process for fully (0002)-oriented AlN films by using a chlorine-based inductively coupled plasma (ICP) and Ni thin films as hard masks. The influences of etching characteristics (etching rate, selectivity) on various parameters (etching power, pressure and gases mixture) were systematically investigated. We achieved etching rate of 723 nm/min, the highest value that has been developed for single-oriented AlN. Etching selectivity was optimized and reached ~ 11, in this report. X-ray photoelectron spectroscopy measurements (XPS) offered a deep understanding of the etching processes and revealed the etching mechanism of AlN by chlorine for the first time.