An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs
An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs
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AlGaN/GaN HEMT 的显式表面电势计算和紧凑电流模型
DOI：
10.1109/led.2015.2388706
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发表时间：
2015-02-01
影响因子：
4.9
通讯作者：
Liou, Juin J.
中科院分区：
文献类型：
--
作者：
Deng, Wanling;Huang, Junkai;Liou, Juin J.
在这封信中，AlGaN/GaN高电子迁移率晶体管的一个新的紧凑的模型开发的基础上明确的解决方案的费米能级和表面电位。该模型计算简单，预测表面电位和电流-电压特性的精度高，是电路仿真的理想模型。这种基于表面势的紧凑模型考虑了自热效应，通过考虑温度依赖的自由载流子迁移率。该模型进行了验证，对数值计算结果和测量数据在很大范围内的偏置条件。
In this letter, a new compact model for the AlGaN/GaN high-electron mobility transistors developed based on explicit solutions to the Fermi level and the surface potential is presented. Its simple calculation and high accuracy in predicting the surface potential and current-voltage characteristics make the model ideal for circuit simulation applications. This surface-potential-based compact model accounts for the self-heating effect by considering the temperature-dependent free-carrier mobility. The model is verified against numerical results and measured data under a wide range of bias conditions.