Bonding wafers with sodium silicate solution
Bonding wafers with sodium silicate solution
复制标题
用硅酸钠溶液粘合晶圆
DOI：
10.1088/0960-1317/7/3/008
复制
发表时间：
1997
影响因子：
2.3
通讯作者：
A. Cozma
中科院分区：
文献类型：
--
作者：
R. Puers;A. Cozma
通过使用薄的硅酸钠溶液中间层可以降低晶片键合的温度。本文介绍了我们的调查结果的债券质量，通过扫描声学显微镜获得。在氧化物覆盖的硅晶片之间获得强键。然而，在温度高于，空洞出现在界面处，它们并没有消失在退火过程中。通过拉伸试验测量粘合强度。最后，提出了一个模型的键合机制。
The temperature of wafer bonding can be reduced by using a thin intermediate layer of sodium silicate solution. This paper presents the results of our investigation on the bond quality, obtained by scanning acoustic microscopy. Strong bonds were obtained at between oxide-covered silicon wafers. However, at temperatures higher than , voids appeared at the interface and they did not vanish during annealing. The strength of the bond was measured by a tensile test. Eventually, a model for the bonding mechanism is proposed.