High-Power Tunnel-Injection 1060-nm InGaAs(Al)GaAs Quantum-Dot Lasers
High-Power Tunnel-Injection 1060-nm InGaAs(Al)GaAs Quantum-Dot Lasers
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DOI：
10.1109/lpt.2009.2021074
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发表时间：
2009-07-15
影响因子：
2.6
通讯作者：
Esquivias, Ignacio
中科院分区：
文献类型：
--
作者：
Pavelescu, Emil-Mihai;Gilfert, C.;Esquivias, Ignacio
利用集成的InGaAs量子膜作为电子的隧道注入器，研制了高功率1060 nm InGaAs-(Al)GaAs量子点(QD)激光器。与未采用隧道注入设计的量子点激光器相比，这种新型激光器的阈值电流温度稳定性和内量子效率都有了显著的提高。
High-power 1060-nm InGaAs-(Al) GaAs quantum-dot (QD) laser material was developed with an integrated InGaAs quantum film acting as a tunnel injector for electrons. In comparison to a QD laser without tunnel-injection design, the new type of lasers exhibit a strongly improved temperature stability of the threshold current and internal quantum efficiency.