Fabrication of in situ Ohmic contacts patterned in three dimensions using a focused ion beam during molecular beam epitaxial growth
Fabrication of in situ Ohmic contacts patterned in three dimensions using a focused ion beam during molecular beam epitaxial growth
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在分子束外延生长过程中使用聚焦离子束制造三维欧姆接触图案
DOI：
10.1116/1.589641
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
D. Ritchie
中科院分区：
文献类型：
--
作者：
P. Sazio;G. Jones;E. Linfield;D. Ritchie
在分子束外延（MBE）生长过程中，聚焦离子束掺杂是一种新的技术，它允许在原位制造独特的三维半导体结构，其掺杂轮廓是使用标准平面光刻无法获得的。在III-V型半导体材料的二维层生长过程中，传统的MBE生长使用热硅渗液电池作为掺杂源。在这里描述的技术中，在无掩模光刻工艺中，在生长腔中添加了扫描Si聚焦离子束（FIB），以选择性地引入掺杂原子。由于FIB在z方向晶体生长期间在计算机控制下在xy平面上光栅，因此可以在半导体内嵌入特定的三维掺杂图案。此外，图案化半导体晶体不需要生长后退火，因为样品上的延迟电场使掺杂离子减速。因此，掺杂剂沉积在脱毛层表面而不是内嵌。
Focused ion beam doping during molecular beam epitaxial (MBE) growth is a novel technique that allows the in situ fabrication of unique three-dimensional semiconductor structures with doping profiles unobtainable using standard planar lithography. Conventional MBE growth uses a thermal Si effusion cell as the dopant source during two-dimensional layer growth of III–V semiconductor material. In the technique described here, a scanning Si focused ion beam (FIB) has been added onto the growth chamber to introduce the dopant atoms selectively in a maskless lithographic process. As the FIB is rastered in the xy plane under computer control during crystal growth in the z direction, it is possible to generate specific three-dimensional dopant patterns embedded within the semiconductor. Furthermore, the patterned semiconductor crystal requires no post growth anneal as the dopant ions are decelerated by a retarding electric field on the sample. The dopant is thus deposited on the epilayer surface rather than impin...