Room-temperature operation of an electrically driven terahertz modulator
Room-temperature operation of an electrically driven terahertz modulator
复制标题
DOI：
10.1063/1.1723689
复制
发表时间：
2004-05-03
影响因子：
4
通讯作者：
Koch, M
中科院分区：
文献类型：
--
作者：
Kleine-Ostmann, T;Dawson, P;Koch, M
在这封信中，我们报告的电控太赫兹调制器的室温操作。这种调制是通过降低门控二维电子气结构中的电子密度来实现的，这导致入射太赫兹辐射束的透射强度增加。通过耗尽密度为10（12）cm（-2）的电子气，我们实现了3%的最大调制深度的脉冲太赫兹辐射覆盖的频率范围从0.1到2太赫兹。(C)2004年，美国物理学会。
In this letter, we report the room-temperature operation of an electrically controlled THz modulator. The modulation is achieved by reducing the electron density in a gated two-dimensional electron gas structure, which leads to an increase in the transmitted intensity of an incident beam of THz radiation. By depleting an electron gas of density 10(12) cm(-2), we achieved a maximum modulation depth of 3% for a pulse of terahertz radiation covering the range of frequencies from 0.1 to 2 THz. (C) 2004 American Institute of Physics.