Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy
Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy
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DOI：
10.1016/j.apmt.2016.11.007
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发表时间：
2017-03-01
影响因子：
8.3
通讯作者：
Volz, Kerstin
中科院分区：
文献类型：
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作者：
Beyer, Andreas;Knaub, Nikolai;Volz, Kerstin
采用像差校正的大角度环形暗场成像技术，在原子尺度上研究了Ga（As，Bi）样品中Bi原子的分布。统计分析表明，Bi原子的分布不是随机的。相反，Bi有序沿着< 100 >和< 101 >晶体学方向与链长高达5个原子被确定。进行电子结构计算表明，这种链状Bi排列是积极有利的相对于孤立的Bi原子由于更强的键共享Ga原子和面内Ga原子的稳定。(C)2016爱思唯尔有限公司版权所有。
The distribution of Bi atoms in Ga(As,Bi) samples on an atomic scale is investigated using aberration corrected high angle annular dark field imaging. With the help of statistical evaluations, it is shown that the Bi atoms are not randomly distributed. Instead, Bi ordering along the < 100 > and < 101 > crystallographic directions with chain lengths of up to 5 atoms is identified. Performing electronic structure calculations shows that this chain-like Bi arrangement is energetically favorable relative to isolated Bi atoms due to the stabilization by stronger bonds to shared Ga atoms and to in-plane Ga atoms. (C) 2016 Elsevier Ltd. All rights reserved.