Phase transition of pseudobinary Cr–Al–N films deposited by magnetron sputtering method
Phase transition of pseudobinary Cr–Al–N films deposited by magnetron sputtering method
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DOI：
10.1016/s0257-8972(97)00402-7
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发表时间：
1997-12
影响因子：
5.4
通讯作者：
A. Sugishima;H. Kajioka;Y. Makino
中科院分区：
文献类型：
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作者：
A. Sugishima;H. Kajioka;Y. Makino
采用反应磁控溅射法制备了Cr1AlxN薄膜，研究了Cr1−xAlxN的相变过程。结果表明，当AlN含量在67%~75%之间时，准二元系CrAl-N薄膜的晶体结构由B1(氯化钠)型转变为B4(纤锌矿)型。从B_1到B_4转变的临界成分与由两个能带参数预测的成分(77mol%AlN)符合得很好。随着CrN含量的增加，B1型结构的Cr-Al-N薄膜的结晶度逐渐升高，AlN含量在75mol%左右时，B4型薄膜的结晶度最低，非常接近B1/B4相变的临界成分。
Phase transition of pseudobinary Cr1−xAlxN was investigated by synthesizing Cr–Al–N films using a reactive magnetron sputtering method. It was found that the crystal structure of the pseudobinary Cr–Al–N films changes from B1 (NaCl) type to B4 (wurtzite) type at the AlN content between 67mol% and 75mol%. The critical composition for the transition from B1 to B4 shows good agreement with the composition (77mol% AlN) predicted by the two band parameters. The crytallinities of the Cr–Al–N films with B1 type structure became higher with increasing content of CrN and the lowest crystallinity was observed in the B4 type Cr–Al–N films with the AlN content around 75mol%, which is very close to the critical composition for B1/B4 phase transition.