Etch rates for micromachining processing
Etch rates for micromachining processing
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DOI：
10.1109/84.546406
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发表时间：
1996-12-01
影响因子：
2.7
通讯作者：
Muller, RS
中科院分区：
文献类型：
--
作者：
Williams, KR;Muller, RS
16种材料的317种组合的腐蚀速率（单晶硅、掺杂和未掺杂的多晶硅、几种类型的二氧化硅、化学计量和富硅氮化硅、铝、钨、钛、Ti/W合金和两种品牌的正性光刻胶）用于在28湿法、等离子体、和无等离子体气相蚀刻（几种HF溶液，H3 PO 4，HNO 3 + H2O + NH 4F，KOH，A型铝蚀刻剂，H2O + H2 O2 + HF，H2 O2，piranha，丙酮，HF蒸气，XeF 2，以及SF6，CF 4，CHF 3，Cl-2，O-2，N-2，等离子体中的He）进行了测量并制成表格，给出了蚀刻制备、使用和化学反应（来自技术文献）。样品制备和MEMS应用程序的材料进行了说明。
The etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, Ti/W alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless-gas-phase etches (several HF solutions, H3PO4, HNO3 + H2O + NH4F, KOH, Type A aluminum etchant, H2O + H2O2 + HF, H2O2, piranha, acetone, HF vapor, XeF2, and various combinations of SF6, CF4, CHF3, Cl-2, O-2, N-2, and He in plasmas) were measured and are tabulated, Etch preparation, use, and chemical reactions (from the technical literature) are given. Sample preparation and MEMS applications are described for the materials.