Electric-field control of exchange bias in multiferroic epitaxial heterostructures
Electric-field control of exchange bias in multiferroic epitaxial heterostructures
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DOI：
10.1103/physrevlett.97.227201
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发表时间：
2006-12-01
影响因子：
8.6
通讯作者：
Fontcuberta, J.
中科院分区：
文献类型：
--
作者：
Laukhin, V.;Skumryev, V.;Fontcuberta, J.
的多铁性（反铁磁和铁电）六方晶系YMnO 3氧化物和软铁磁（FM）层的外延薄膜之间的磁交换被用来耦合的FM层的反铁磁的磁状态的磁响应。我们将表明，偏置的铁电YMnO 3层的电场允许控制的磁交换偏置和随后的FM层的磁输运性质。这一发现可能有助于为新一代电场控制的自旋电子器件铺平道路。
The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.