Katsuyuki Sekine: "Highly Reliable Ultrathin Silicon Oxide Film Formation at Low Temperature by Oxygen Radical Generated in High-Density Krypton Plasma"IEEE TRANSACTION ON Electron Devices. Vol. 48, No. 8. 1550-1555 (2001)
Katsuyuki Sekine: "Highly Reliable Ultrathin Silicon Oxide Film Formation at Low Temperature by Oxygen Radical Generated in High-Density Krypton Plasma"IEEE TRANSACTION ON Electron Devices. Vol. 48, No. 8. 1550-1555 (2001)
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Katsuyuki Sekine：“高密度氪等离子体中产生的氧自由基在低温下形成高度可靠的超薄氧化硅薄膜”IEEE TRANSACTION ON Electron Devices。
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