Comparative study on strain induced electrical properties modulation of Si p-n junctions
Comparative study on strain induced electrical properties modulation of Si p-n junctions
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DOI：
10.1063/1.4794084
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发表时间：
2013-03
影响因子：
4
通讯作者：
Wangran Wu;Yu Pu;Junzhuan Wang;Xiangming Xu;Jiabao Sun;Zhe Yuan;Yi Shi;Yi Zhao
中科院分区：
文献类型：
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作者：
Wangran Wu;Yu Pu;Junzhuan Wang;Xiangming Xu;Jiabao Sun;Zhe Yuan;Yi Shi;Yi Zhao
了解p-n结非常重要，因为p-n结是半导体器件的基本元件。在这项研究中，我们实验研究了应变引起的Si p+-n和n+-p结的电学性质调制。研究发现，在单轴拉伸应力作用下，大正向偏压区的电流显著增加，而扩散电流主导区的电流增加幅度较小.此外，在扩散电流主导区和大正向偏压区，理想因子随外加应力的增加而减小。的观察结果解释的应变引起的能带结构的变化，它们对少数载流子浓度的影响，和压阻效应。
Understanding the p-n junctions is of great importance because p-n junctions are the essential elements of semiconductor devices. In this study, we experimentally investigated the strain induced electrical properties modulation of Si p+-n and n+-p junctions. It is found that, under the uniaxial tensile stress, the current in the large-forward-bias region increases significantly, while a rather small current increase is observed in the diffusion-current-dominant region. Besides, the ideality factors in the diffusion-current-dominant region and the large-forward-bias region decrease when the amount of the applied stress increases. The observations are explained by the strain induced variations in energy band structure, their effect on minority carrier concentrations, and the piezoresistance effect.