Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect
Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect
复制标题
高密度沟槽 MOSFET 中与体效应有关的反向恢复
DOI：
10.1109/ispsd.2006.1666076
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
N. Koper
中科院分区：
文献类型：
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作者：
T. López;R. Elferich;N. Koper
通过有限元模拟研究低压沟槽 MOSFET 中的反向恢复瞬态。与传统 pn 结二极管的关断动态相比，这些 MOSFET 中体二极管关断的特殊性在于其现有的强栅极电压依赖性。这种行为在理论上可以用所谓的身体效应来解释。详细分析了其对反向恢复电流的影响。提出了一种电路模拟器的行为模型，可以准确地描述相关现象
Reverse recovery transients in low voltage trench MOSFETs are investigated by means of finite element simulations. In contrast to the turn-off dynamics of a conventional pn junction diode, the particularity of the body diode turn-off in these MOSFETs is its existing strong gate voltage dependency. This behavior can be explained in theory by the so-called body-effect. Its consequences on the reverse recovery current are analyzed in detailed. A behavioral model for circuit simulators is proposed that accurately describes the relevant phenomena