Electrostatics of electron-hole interactions in van der Waals heterostructures
Electrostatics of electron-hole interactions in van der Waals heterostructures
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DOI：
10.1103/physrevb.97.125427
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发表时间：
2018-03-21
影响因子：
3.7
通讯作者：
Reichman, D. R.
中科院分区：
文献类型：
--
作者：
Cavalcante, L. S. R.;Chaves, A.;Reichman, D. R.
从理论上研究了货车德瓦耳斯异质结构中电介质屏蔽对电子-空穴相互作用的影响。在文献中描述这些相互作用的模型之间的比较和这些方法的局限性进行了讨论。基于传输矩阵方法，开发了一种简单的电介质板堆叠的泊松方程的数值解，使电子-空穴相互作用势的计算在非常低的计算成本和合理的精度。使用不同的潜在的模型，在这些系统中的直接和间接激子结合能计算Wannier-Mott理论，并与最近的实验激子在二维材料的理论结果进行了比较讨论。
The role of dielectric screening of electron-hole interaction in van der Waals heterostructures is theoretically investigated. A comparison between models available in the literature for describing these interactions is made and the limitations of these approaches are discussed. A simple numerical solution of Poisson's equation for a stack of dielectric slabs based on a transfer matrix method is developed, enabling the calculation of the electron-hole interaction potential at very low computational cost and with reasonable accuracy. Using different potential models, direct and indirect exciton binding energies in these systems are calculated within Wannier-Mott theory, and a comparison of theoretical results with recent experiments on excitons in two-dimensional materials is discussed.