Field emission from ion‐milled diamond films on Si
Field emission from ion‐milled diamond films on Si
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Si 上离子铣削金刚石薄膜的场发射
DOI：
10.1116/1.587963
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Satoshi Katsumata
中科院分区：
文献类型：
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作者：
T. Asano;Yoshimichi Oobuchi;Satoshi Katsumata
采用等离子体增强化学气相沉积技术在硅衬底上生长了金刚石颗粒。对金刚石/硅结构进行了Ar离子球磨。研究发现，如果金刚石以孤立颗粒的形式存在，离子研磨可以形成尖锐的金刚石锥体。研究还发现，经Ar离子球磨和随后的真空热处理后，金刚石/硅样品的场发射电流显著增加。
Diamond grains were grown on Si substrates by plasma‐enhanced chemical vapor deposition. Ar ion milling was applied to the diamond/Si structures. It has been found that sharp diamond cones can be formed by ion milling if diamonds are in the form of isolated grains. It has also been found that the field emission current from diamond/Si samples is drastically increased by Ar ion milling and subsequent heat treatment in vacuum.