Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors
Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors
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DOI：
10.1063/1.4707164
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发表时间：
2012-04
期刊：
影响因子：
1.6
通讯作者：
Xinge Yu;Junsheng Yu;Wei Huang;Lin Zhang;Hong-juan Zeng
中科院分区：
文献类型：
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作者：
Xinge Yu;Junsheng Yu;Wei Huang;Lin Zhang;Hong-juan Zeng
用PMMA介质层制作了底接触并五苯场效应晶体管，并研究了晶体管的空气稳定性。为了表征器件稳定性，将场效应晶体管暴露于环境条件30天，随后进行表征。通过对器件电性能退化过程的跟踪，研究了器件场效应迁移率、饱和电流和关态电流的变化。通过原子力显微镜研究并五苯薄膜在沟道和源极/漏极（S/D）接触区的形貌变化，可以清楚地看出，粘附到S/D的并五苯薄膜的形貌急剧退化。此外，通过详细研究接触电阻的变化，发现S/D接触效应是性能下降的主要原因。
Bottom-contact pentacene field-effect transistors were fabricated with a PMMA dielectric layer, and the air stability of the transistors was investigated. To characterize the device stability, the field-effect transistors were exposed to ambient conditions for 30 days and subsequently characterized. The degradation of electrical performance was traced to study the variation of field-effect mobility, saturation current and off-state current. By investigating the morphology variance of the pentacene film at the channel and source/drain (S/D) contact regions by atomic force microscopy, it was clear that the morphology of the pentacene film adhered to the S/D degenerated dramatically. Moreover, by studying the variation of contact resistance in detail, it was found that the S/D contact effect was the main reason for the degradation in performance.