Anisotropic effects of oxygen vacancy defects on the electrical properties of highly oriented bismuth titanate ferroelectric ceramics
Anisotropic effects of oxygen vacancy defects on the electrical properties of highly oriented bismuth titanate ferroelectric ceramics
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氧空位缺陷对高取向钛酸铋铁电陶瓷电性能的各向异性影响
DOI：
10.1016/j.ceramint.2021.07.223
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发表时间：
2021-07
影响因子：
5.2
通讯作者：
Yan Kang
中科院分区：
文献类型：
--
作者：
Niu Penghao;Zhang Zixin;Wang Fangfang;Yan Kang
钛酸铋（Bi4Ti3O12，BIT）由于其层状钙钛矿结构而表现出高居里温度和各向异性电性能，因此是高温压电应用的重要铁电材料。了解 BIT 铁电体各向异性的影响对于开发新型高温压电材料至关重要。在这项研究中，利用熔盐法制备的高度晶粒取向的 BIT 片晶，采用流延技术制造了高度织构的 BIT 陶瓷。织构BIT陶瓷呈现出致密的微观结构和沿(00l)面的高晶粒取向，织构度F00l= 0.86。它沿着平行和垂直于流延平面轴的方向表现出显着的电性能各向异性。在平行和垂直样品中分别观察到双铁电磁滞 P-Eloop 和正常铁电 P-Eloop。除了层状晶体结构和域外，氧空位缺陷排列的各向异性及其在结构中的传输导致织构BIT陶瓷的铁电性能显着的各向异性。这项工作证明了氧空位缺陷的各向异性排列及其对高温铋层状结构铁电体电性能的影响。
Bismuth titanate (Bi4Ti3O12, BIT) exhibits a high Curie temperature and anisotropic electrical performance owing to its layered perovskite structure, and hence, it is an important ferroelectric material for high-temperature piezoelectric applications. It is crucial to understand the effects of the anisotropy in BIT-based ferroelectrics for developing novel high-temperature piezoelectric materials. In this study, a highly textured BIT ceramic was fabricated using the tape-casting technique from highly grain-oriented BIT platelets prepared by the molten salt method. The textured BIT ceramic showed a dense microstructure and high grain orientation along the (00l) plane with a texturing degreeF00l= 0.86. It exhibited significant anisotropy in the electrical properties along the directions parallel and perpendicular to the axis of the tape-casting plane. Double ferroelectric hysteresisP–Eloops and normal ferroelectricP–Eloops were observed in the parallel and perpendicular samples, respectively. In addition to the layered crystal structure and domains, the anisotropy in the arrangement of the oxygen vacancy defects and their transport in the structure led to a significant anisotropy in the ferroelectric properties of the textured BIT ceramics. This work demonstrates the anisotropic arrangement of the oxygen vacancy defects and its effect on the electrical properties of high-temperature bismuth layer-structured ferroelectrics.
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影响因子：
5.7
作者：
Dong‐Fang Jiang;Zhiyong Zhou;R. Liang;Xianlin Dong
通讯作者：
Dong‐Fang Jiang;Zhiyong Zhou;R. Liang;Xianlin Dong
影响因子：
3.2
作者：
J. Liu;Zhijian Shen;Haixue Yan;M. Reece;Y. Kan;Pei-ling Wang
通讯作者：
J. Liu;Zhijian Shen;Haixue Yan;M. Reece;Y. Kan;Pei-ling Wang
影响因子：
5.2
作者：
Bokolia, Renuka;Thakur, O. P.;Sreenivas, K.
通讯作者：
Sreenivas, K.
DOI：
10.1143/jjap.31.3108
发表时间：
1992-09-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
影响因子：
--
作者：
MASUDA, Y;MASUMOTO, H;HIRAI, T
通讯作者：
HIRAI, T
模板晶粒生长制备织构Bi4Ti3O12陶瓷
DOI：
10.4028/www.scientific.net/kem.264-268.1317
发表时间：
2004-05
期刊：
Key Engineering Materials
影响因子：
--
作者：
Yanmei Kan;Peiling Wang;Yongxiang Li;Yi-Bing Cheng;D.S.Yan
通讯作者：
D.S.Yan