Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga 2 O 3 Schottky Rectifiers
Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga 2 O 3 Schottky Rectifiers
复制标题
电子注入对 10 MeV 质子辐照 β-Ga 2 O 3 肖特基整流器中少数载流子输运的影响
DOI：
10.1149/2162-8777/ab902b
复制
发表时间：
2020
影响因子：
2.2
通讯作者：
Pearton, Stephen J.
中科院分区：
文献类型：
--
作者：
Modak, Sushrut;Chernyak, Leonid;Khodorov, Sergey;Lubomirsky, Igor;Ruzin, Arie;Xian, Minghan;Ren, Fan;Pearton, Stephen J.
我们报道了延长电子束暴露时间对10 MeV质子辐照（辐照量~ 10 14 cm−2）si掺杂β- ga2o3肖特基整流器的少数载流子输运特性的影响。少数载流子的扩散长度(L)随温度的升高而减小，从21℃下的330 nm减小到120℃下的289 nm，活化能为~ 26 meV。这种能量对应于存在浅层硅阱能级。延长电子束曝光时间可使室温下的L从330 nm提高到726 nm。随着温度的升高，L的增加速率较低，活化能为43 meV。最后，简要比较了电子注入对质子辐照、α粒子辐照和参考掺硅β- ga2o3肖特基整流器的影响。
We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence∼ 10 14 cm− 2) Si-doped β-Ga 2 O 3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of∼ 26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga 2 O 3 Schottky rectifiers is presented.