An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
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DOI：
10.1016/j.jallcom.2009.09.086
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发表时间：
2010-01
影响因子：
6.2
通讯作者：
Degang Zhao;D. Jiang;Jingkang Zhu;Hui Wang;Z. Liu;S. Zhang;Wang Yanguo;Q. Jia;Hui Yang
中科院分区：
文献类型：
--
作者：
Degang Zhao;D. Jiang;Jingkang Zhu;Hui Wang;Z. Liu;S. Zhang;Wang Yanguo;Q. Jia;Hui Yang
研究了阱厚度对金属有机化学气相沉积（MOCVD）生长的InGaN/GaN多量子威尔斯阱（MQW）电致发光（EL）的影响。当阱厚度在3.0-5.1nm范围内时，EL峰值波长随阱厚度的增加而增加。红移主要归因于量子限制斯塔克效应（QCSE）。作为对比，发现InGaN/GaN多量子阱的电致发光强度随阱厚度的增加而增加，尽管QCSE。X射线衍射结果表明，随着阱厚的增加，界面变得更加光滑，界面粗糙度的降低是InGaN/GaN多量子阱电致发光强度提高的重要因素。
The influence of well thickness on the electroluminescence (EL) of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition is investigated. It is found that the peak wavelength of EL increases with the increase of well thickness when the latter is located in the range of 3.0–5.1nm. The redshift is mainly attributed to the quantum confined Stark effect (QCSE). As a contrast, it is found that the EL intensity of InGaN/GaN MQWs increases with the increase of well thickness in spite of QCSE. The result of X-ray diffraction demonstrates that the interface become smoother with the increase of well thickness and suggests that the reduced interface roughness can be an important factor leading to the increase of EL intensity of InGaN/GaN MQWs.