InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy
InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy
复制标题
通过截面扫描隧道显微镜研究 InGaAs/InP 量子阱混合
DOI：
10.1063/1.1361237
复制
发表时间：
2001
影响因子：
3.2
通讯作者：
I. V. Mitchell
中科院分区：
文献类型：
--
作者：
Huajie Chen;H. McKay;R. Feenstra;G. Aers;P. Poole;Robin L. Williams;S. Charbonneau;P. Piva;T. W. Simpson;I. V. Mitchell
利用截面扫描隧道显微镜（STM）研究了离子注入和热退火引起的晶格匹配InGaAs/InP量子阱（QW）混合。不同的应变发展QWs（由STM地形的弹性弛豫在横截面解理样品）被发现是依赖于相对于QWs的注入离子的范围。结果表明，当离子通过多量子阱（MQW）注入时，量子威尔斯阱与势垒层在混合后仍保持晶格匹配。将离子注入MQW叠层上方的盖层中的浅注入导致拉伸应变的威尔斯和威尔斯与势垒之间的压缩应变的界面。在后一种情况下的应变发展是由于不同程度的相互扩散的第III组和第V组的子晶格。有限元弹性计算被用来提取第V和第III组互扩散长度比，和结果，使用Escherren…
Cross-sectional scanning tunneling microscopy (STM) is used to study lattice matched InGaAs/InP quantum well (QW) intermixing induced by ion implantation and thermal annealing. Different strain development in QWs (determined by STM topography of elastic relaxation in cross sectionally cleaved samples) is found to be dependent upon the range of the implanted ions relative to the QWs. It is found that the quantum wells remain latticed matched to the barrier layers after intermixing when ions are implanted through the multiple quantum well (MQW) stack. A shallow implantation in which ions are implanted into the cap layer above the MQW stack leads to tensilely strained wells and compressively strained interfaces between wells and barriers. The strain development in the latter case is attributed to different degrees of interdiffusion on the group III and group V sublattices. Finite element elastic computations are used to extract the group V and group III interdiffusion length ratio, and results using differen...