Characterization of hafnium oxide thin films by source gas pulse introduced metalorganic chemical vapor deposition, using amino-family Hf precursors
Characterization of hafnium oxide thin films by source gas pulse introduced metalorganic chemical vapor deposition, using amino-family Hf precursors
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DOI：
10.1143/jjap.42.6015
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发表时间：
2003-09-01
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影响因子：
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通讯作者：
Tokumitsu, E
中科院分区：
文献类型：
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作者：
Hino, S;Nakayama, M;Tokumitsu, E
我们用源气体脉冲引入金属有机化学气相沉积(MOCVD)的方法在SiO_2/p-Si(001)衬底上生长了氧化Hf薄膜，它们分别是四乙基二乙胺基Hf(Hf[N(C2H5)(2)](4))和四甲胺Hf(Hf[N(CH3)(2)](4))。使用O-2或H2O作为氧化气。结果表明，当沉积温度低至280℃时，使用H2O可以降低氧化锂膜的残留杂质浓度。此外，我们还发现用Hf[N(C2H5)(2)](4)生长的Hfnurn氧化物薄膜的残留杂质浓度比用Hf[N(CH3)(2)](4)生长的低。这一趋势与漏电流密度一致。在280℃下用Hf[N(C2H5)(2)](4)生长的氧化汞薄膜的SiO_2厚度为1.4 nm，厚度为4.7×10~(-6)A/cm(2)@~(-1)V。
We have characterized hafnium oxide thin films grown on SiO2/p-Si(001) by source gas pulse introduced metalorganic chemical vapor deposition (MOCVD) using tetrakis-diethylamido-hafnium (Hf[N(C2H5)(2)](4)) and tetrakis-dimethylamido-hafnium (Hf[N(CH3)(2)](4)). O-2 or H2O is used as oxidant gas. It is demonstrated that the use of H2O can reduce the residual impurity concentrations of hafnium oxide films when the deposition temperature is as low as 280degreesC. In addition, we have found that the residual impurity concentration of hafniurn oxide films grown with Hf[N(C2H5)(2)](4) is lower than that grown with Hf[N(CH3)(2)](4). This tendency agrees with the leakage current density. An equivalent SiO2 thickness (EOT) of 1.4nm with 4.7 x 10(-6) A/cm(2) @ -1 V have been obtained for the hafniurn oxide films grown with Hf[N(C2H5)(2)](4) at 280degreesC.