Magnetic bound states in SmB6
Magnetic bound states in SmB6
复制标题
SmB6 中的磁束缚态
DOI：
10.1002/andp.200051209-1017
复制
发表时间：
2000
影响因子：
3
通讯作者：
P. Riseborough
中科院分区：
文献类型：
--
作者：
P. Riseborough
重费米子半导体如Ce3Bi4Pt3、YbB12和SmB6可以被建模为间接杂化带隙半导体。的差距的幅度小于由局部密度泛函电子结构计算预测的差距，这表明由于电子相关性强的重整化。在此模型的范围内检查的非弹性中子散射谱Im[χ（q，ω）]。在SmB 6和YbB 12的非弹性中子散射实验中，在间接能隙内的能量处观察到异常尖锐和温度相关的峰。能隙内的特征被确定为磁束缚态的激发，这是由重整化准粒子之间的残余反铁磁相互作用引起的。
The heavy fermion semiconductors such as Ce3Bi4Pt3, YbB12, and SmB6 may be modeled as indirect hybridization gap semiconductors. The magnitudes of the gap are smaller than the gaps predicted by local density functional electronic structure calculations, suggesting strong renormalizations due to electronic correlations. The inelastic neutron scattering spectra Im[χ(q,ω)] are examined within the context of this model. Anomalously sharp and temperature dependent peaks are seen at energies within the indirect gap in the inelastic neutron scattering experiments on SmB6 and YbB12 The in‐gap features are identified as excitations of magnetic bound states, which are induced by residual anti‐ferromagnetic interactions between the renormalized quasi‐particles.