Low-Temperature Processing of Pb(Zr0.53,Ti0.43)O3 Thin Films by Sol-Gel Casting
Low-Temperature Processing of Pb(Zr0.53,Ti0.43)O3 Thin Films by Sol-Gel Casting
复制标题
溶胶-凝胶铸造法低温加工 Pb(Zr0.53,Ti0.43)O3 薄膜
DOI：
10.1143/jjap.39.5429
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发表时间：
2000
影响因子：
1.5
通讯作者：
T. Hayashi
中科院分区：
文献类型：
--
作者：
T. Ohno;Masahumi Kunieda;Hisao Suzuki;T. Hayashi
本文主要研究了一种新型的低温沉积较厚薄膜的工艺。我们提出了一种新的溶胶-凝胶浇铸工艺，该工艺包括在溶胶-凝胶前驱体溶液中分散细小的晶体颗粒，然后在相对较低的温度下浇铸和热处理。在这项研究中，我们描述了优化工艺参数的基本概念。通过6次镀膜工艺(1.5微米/次镀膜)制备了厚度达9微米的致密铁电PZT(PZT)薄膜。在优化的工艺参数下制备的PZT厚膜具有较好的铁电性(剩余极化为12µC/cm2，矫顽场为12 kV/cm)和良好的介电性能(相对介电常数约为1400)。
This paper focuses on a new class of processing for the low-temperature deposition of relatively thick films. We propose a new process of sol-gel casting which involves the dispersion of fine crystalline particles in a sol-gel derived precursor solution followed by casting and annealing at relatively low temperatures. In this study, we describe the basic concepts for optimizing the process parameters. As a result, dense ferroelectric PZT(Pb(Zr0.53,Ti0.43)O3) films with thickness up to 9 µm were deposited by up to six coating operations (1.5 µm/one coating operation). The PZT thick film deposited under optimized process parameters exhibited relatively good ferroelectricity (remanent polarization of 12 µC/cm2 and coercive field of 12 kV/cm) and a good dielectric property (relative permittivity of about 1400).