Robust Zero-Field Skyrmion Formation in FeGe Epitaxial Thin Films
Robust Zero-Field Skyrmion Formation in FeGe Epitaxial Thin Films
复制标题
DOI：
10.1103/physrevlett.118.027201
复制
发表时间：
2017-01-09
影响因子：
8.6
通讯作者：
Yang, F. Y.
中科院分区：
文献类型：
--
作者：
Gallagher, J. C.;Meng, K. Y.;Yang, F. Y.
B20相磁性材料引起了人们的极大兴趣，因为它们能够实现磁性Skyrmions。在这个新兴领域的一个主要努力是在室温和零磁场下稳定Skyrmions。我们在Si（111）衬底上生长了纯相、高结晶质量的FeGe外延薄膜。霍尔效应测量表明，扣除正常和异常霍尔效应后，一个强大的拓扑霍尔效应，证明在5和275 K之间的FeGe薄膜的高密度Skyrmion的形成。特别是，在零磁场下观察到大量的拓扑霍尔效应，显示出鲁棒的Skyrmion相位，而不需要外部磁场。
B20 phase magnetic materials have been of significant interest because they enable magnetic Skyrmions. One major effort in this emerging field is the stabilization of Skyrmions at room temperature and zero magnetic field. We grow phase-pure, high crystalline quality FeGe epitaxial films on Si(111). Hall effect measurements reveal a strong topological Hall effect after subtracting the ordinary and anomalous Hall effects, demonstrating the formation of high density Skyrmions in FeGe films between 5 and 275 K. In particular, a substantial topological Hall effect was observed at a zero magnetic field, showing a robust Skyrmion phase without the need of an external magnetic field.