Formation of Epitaxial CsCl-Type Iron Silicide on Si(111)
Formation of Epitaxial CsCl-Type Iron Silicide on Si(111)
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Si(111)上外延CsCl型硅化铁的形成
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
H. Magnan
中科院分区：
文献类型：
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作者：
U. Kafader;M. Tuilier;C. Pirri;P. Wetzel;G. Gewinner;D. Bolmont;O. Heckmann;D. Chandesris;H. Magnan
用X射线光电子衍射（XPD）和表面扩展X射线吸收精细结构（SEXAFS）实验证实了立方铁硅化物相在Si（111）上的外延生长。XPD实验表明，沉积在Si（111）上并随后在~ 500 °C退火的5-单层Fe膜具有立方结构。在Fe K边（7110 eV）处的SEXAFS表明，Fe原子与8个Si原子配位，键长为（2.38 ± 0.04）A，与6个Fe原子配位，键长为（2.71 ± 0.04）A.所有的测量导致的结论，这种立方硅化物具有CsCl型结构。
The epitaxial growth of a cubic Fe silicide phase on Si(111) has been confirmed by means of X-ray photoelectron diffraction (XPD) and surface-extended X-ray absorption fine-structure (SEXAFS) experiments. XPD experiments show that a 5-monolayer Fe film deposited on Si(111) and subsequently annealed at ~ 500 °C has a cubic structure. SEXAFS measured at the Fe K edge (7110 eV) reveals that Fe atoms are coordinated with eight Si atoms with bond length of (2.38 ± 0.04) A and with six Fe atoms with bond length of (2.71 ± 0.04) A. All measurements lead to the conclusion that this cubic silicide has a CsCl-type structure.