Simulation of RF circuits with a PDE model of the MOSFET

Simulation of RF circuits with a PDE model of the MOSFET
复制标题

DOI:
10.1109/icasic.2001.982650
复制
发表时间:
2001-10
期刊:
ASICON 2001. 2001 4th International Conference on ASIC Proceedings (Cat. No.01TH8549)
影响因子:
--
通讯作者:
A. Wing;Fu Yawei;Lai Jin-mei;Zhang Qianling
A. Wing;Fu Yawei;Lai Jin-mei;Zhang Qianling
中科院分区:
其他
文献类型:
--
作者:
A. Wing;Fu Yawei;Lai Jin-mei;Zhang Qianling

文献摘要

被引文献

相似文献

We present an iterative algorithm to compute the response of an RF circuit in which the MOSFET is modeled by a system of partial differential-algebraic equations, rather than an equivalent circuit. The problem amounts to the solution of a nonlinear PDE coupled to a linear ODE. We illustrate the algorithm with the simulation of the Colpitts oscillator.