The effect of growth temperature on physical properties of heavily doped ZnO:Al films
The effect of growth temperature on physical properties of heavily doped ZnO:Al films
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DOI：
10.1002/pssa.200824291
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发表时间：
2009-04-01
影响因子：
2
通讯作者：
No, Kwangsoo
中科院分区：
文献类型：
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作者：
Hong, Jongin;Paik, Hanjong;No, Kwangsoo
采用射频磁控溅射技术在高温稳定的玻璃衬底上制备了高掺杂ZnO Al薄膜。研究了生长温度对薄膜物理性能的影响。随着生长温度的升高，显微组织由柱状组织演变为粒状组织，再演变为典型的蜂窝状组织，晶粒形成巨大，致密化程度高。随着生长温度的升高，所有al掺杂ZnO薄膜都表现出较高的光学透明度，并且吸收边向短波长偏移（蓝移）。在500℃下形成的致密微观结构具有高结晶质量和大晶粒，使我们能够获得2.28 x 10(-3) Omega cm和超过90%的高可见光透过率，即使ZnO薄膜掺杂约5.5% at%的Al含量。(C) 2009 WILEY-VCH Verlag GmbH & Co., KGaA, Weinheim
Heavily-doped ZnO Al film have been deposited on high temperature stable glass substrates using radio-frequency (RF) magnetron sputtering. The effect of growth temperature on physical properties of the films has been investigated. The microstructure evolved a columnar structure into a granular one with the increase in growth temperature and then a typical honeycomb type microstructure representing huge grain formation indicating high densification. All Al-doped ZnO films exhibited high optical transparency and the absorption edge shifted to the short wavelength (blue-shift) as the growth temperature increased. The dense microstructure with a high crystallographic quality and large grains evolved at 500 degrees C enabled us to obtain 2.28 x 10(-3) Omega cm and high visible transmittance over 90% even if the ZnO film was doped with an Al content of approximately 5.5 at%. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim