Coherent detection of THz-induced sideband emission from excitons in the nonperturbative regime
Coherent detection of THz-induced sideband emission from excitons in the nonperturbative regime
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非微扰状态下激子太赫兹引起的边带发射的相干检测
DOI：
10.1103/physrevb.97.165122
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发表时间：
2018
影响因子：
3.7
通讯作者：
and H. Hirori
中科院分区：
文献类型：
--
作者：
K. Uchida;T. Otobe;T. Mochizuki;C. Kim;M. Yoshita;K. Tanaka;H. Akiyama;L. N. Pfeiffer;K. W. West;and H. Hirori
太赫兹（THz）波与激子的强相互作用引起非微扰光学效应，如拉比分裂和高阶边带产生。本文研究了GaAs/AlGaAs多量子威尔斯阱中太赫兹辐射的相干特性。随着太赫兹电场的增加，太赫兹修饰激子的光学极化率发生红移，光谱展宽，相位发生异常偏移。这意味着激子的场电离在非微扰区改变了太赫兹修饰激子。
Strong interaction of a terahertz (THz) wave with excitons induces nonperturbative optical effects such as Rabi splitting and high-order sideband generation. Here, we investigated coherent properties of THz-induced sideband emissions from GaAs/AlGaAs multiquantum wells. With increasing THz electric field, optical susceptibility of the THz-dressed exciton shows a redshift with spectral broadening and extraordinary phase shift. This implies that the field ionization of theexciton modifies the THz-dressed exciton in the nonperturbative regime.