Preparation of SrBi2Ta2O9 Thin Films by Metalorganic Chemical Vapor Deposition from Two New Liquid Organometallic Sources
Preparation of SrBi2Ta2O9 Thin Films by Metalorganic Chemical Vapor Deposition from Two New Liquid Organometallic Sources
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两种新型液态有机金属源金属有机化学气相沉积法制备 SrBi2Ta2O9 薄膜
DOI：
10.1143/jjap.38.l199
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
Takayuki Watanabe
中科院分区：
文献类型：
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作者：
H. Funakubo;N. Nukaga;K. Ishikawa;Takayuki Watanabe
以Bi(CH3)3、Sr[Ta(O·C2H5)6]2和O2为原料，采用金属有机化学气相沉积（MOCVD）法制备了具有高重复性的SrBi2Ta2O9薄膜。随着沉积温度的升高，膜中的Bi/Ta和Sr/Ta比值分别升高和降低。这种行为可以通过Bi(CH3) 3-O2和Sr[Ta(O·C2H5)6] 2-O2体系沉积的Bi2O3和Sr - Ta - O薄膜的沉积温度依赖性来估计。在600℃下，Bi/Ta比值可由Bi(CH3)3与Sr[Ta(O·C2H5)6]2的输入气体浓度比控制。另一方面，Sr/Ta比与输入气体浓度无关。在670℃下沉积了一层几乎为单相的SrBi2Ta2O9。在O2气氛中750℃热处理30 min后，670℃下沉积的薄膜的剩余极化和矫顽力场分别为5.0µC/cm2和80 kV/cm。
SrBi2Ta2O9 thin films were prepared with high compositional reproducibility by metalorganic chemical vapor deposition (MOCVD) using Bi(CH3)3, Sr[Ta(O·C2H5)6]2 and O2 as source materials. When the deposition temperature was increased, the Bi/Ta and Sr/Ta ratios in the film increased and decreased, respectively. This behavior can be estimated from the deposition temperature dependence of Bi2O3 and Sr–Ta–O films deposited from Bi(CH3)3–O2 and Sr[Ta(O·C2H5)6]2–O2 systems, respectively. Bi/Ta ratio can be controlled by the input gas concentration ratio of Bi(CH3)3 to Sr[Ta(O·C2H5)6]2 at 600°C. On the other hand, Sr/Ta ratio was independent of the input gas concentration. An almost single phase of SrBi2Ta2O9 was deposited at 670°C. The remanent polarization and the coercive field of the film deposited at 670°C following heat treatment at 750°C for 30 min in O2 atmosphere were 5.0 µC/cm2 and 80 kV/cm, respectively.