Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films
Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films
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DOI：
10.1063/1.5055680
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发表时间：
2019-02-01
期刊：
影响因子：
6.1
通讯作者：
Evans, K. R.
中科院分区：
文献类型：
--
作者：
Leach, J. H.;Udwary, K.;Evans, K. R.
采用卤化物气相外延法在体（010）晶体上生长α-Ga 2 O 3同质外延膜，在c面蓝宝石衬底上生长α-Ga 2 O 3异质外延膜。在生长之前制备β-Ga 2 O3衬底，以去除亚表面损伤并将各种错切施加到其表面。结构和电性能被认为是最受影响的β-Ga 2 O3基板本身的结晶度，而表面形态被认为是最受影响的误切的基板。生长条件的适当选择和误切似乎是实现平滑，厚（> 20 μ m）同质外延β-Ga 2 O 3膜的关键。在市售的c-平面蓝宝石衬底上生长的α-Ga 2 O3膜，发现膜形态受到蓝宝石衬底的表面光洁度的强烈影响。当蓝宝石在生长之前被充分抛光时，发现α-Ga 2 O 3膜是平滑的并且不含附加相或晶体孪晶。(C)2018年作者。
Halide vapor phase epitaxy was used to grow homoepitaxial films of alpha-Ga2O3 on bulk (010) crystals and heteroepitaxial films of alpha-Ga2O3 on c-plane sapphire substrates. The beta-Ga2O3 substrates were prepared prior to growth to remove sub-surface damage and to apply various miscuts to their surfaces. Structural and electrical properties were found to be most impacted by the crystallinity of the beta-Ga2O3 substrate itself, while the surface morphology was found to be most impacted by the miscut of the substrate. The appropriate choice of growth conditions and the miscut appear to be critical to realizing smooth, thick (> 20 mu m) homoepitaxial films of beta-Ga2O3. The alpha-Ga2O3 films were grown on commercially available c-plane sapphire substrates, and the film morphology was found to be strongly impacted by the surface finish of the sapphire substrates. The alpha-Ga2O3 films were found to be smooth and free of additional phases or crystal twinning when the sapphire was sufficiently polished prior to growth. (C) 2018 Author(s).