Energy band alignment at the (100)Ge/HfO2 interface
Energy band alignment at the (100)Ge/HfO2 interface
复制标题
DOI：
10.1063/1.1688453
复制
发表时间：
2004-03-29
影响因子：
4
通讯作者：
Stesmans, S
中科院分区：
文献类型：
--
作者：
Afanas'ev, VV;Stesmans, S
利用Ge向Hf氧化物内部的电子和空穴发光，直接确定了Ge/HfO2的界面带图。推断界面处的导价带偏移量为2.0 +/- 0.1和3.0 +/- 0.1 eV；提出了将沉积的HfO2用作Ge绝缘体的可能性。在氧中对Ge/HfO2结构进行沉积后退火后，由于GeO2中间层的生长，价带偏移量减少了1 eV。(C) 2004年美国物理研究所。
The Ge/HfO2 interface band diagram was directly determined using internal photoemission of electrons and holes from Ge into the Hf oxide. The inferred offsets of the conduction and valence band at the interface, 2.0 +/- 0.1 and 3.0 +/- 0.1 eV; respectively, suggest the possibility to apply the deposited HfO2 as an insulator on Ge. The post-deposition annealing of the Ge/HfO2 structures in oxygen results in similar to1 eV reduction of the valence band offset attributed to the growth of GeO2 interlayer. (C) 2004 American Institute of Physics.