EFFECTS OF IONIZING-RADIATION ON AMORPHOUS INSULATORS
EFFECTS OF IONIZING-RADIATION ON AMORPHOUS INSULATORS
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DOI：
10.1080/00337578208216818
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发表时间：
1982-01-01
影响因子：
1
通讯作者：
FRIEBELE, EJ
中科院分区：
文献类型：
--
作者：
GRISCOM, DL;FRIEBELE, EJ
本文旨在更新之前关于电离辐射对非晶绝缘体影响的评论。辐射诱导的缺陷中心（陷阱电子或空穴）的电子和原子结构进行了讨论，主要是从电子自旋共振技术的数据。重点放在重要的光纤材料（纯的和掺杂的熔融石英）和注意力是针对有关辐射诱导的光吸收带的问题，以特定的缺陷结构。
This paper seeks to update previous reviews of the effects of ionizing radiation on amorphous insulators. The electronic and atomic structures of radiation-induced defect centers (trapped electrons or holes) are discussed primarily in terms of data deriving from the technique of electron spin resonance. Emphasis is placed on important fiber-optic materials (pure and doped fused silicas) and attention is directed to the problem of relating radiation-induced optical absorption bands to specific defect structures.