In-Plane Field Effects on the Dynamics of Domain Walls in Ultrathin Co Films With Perpendicular Anisotropy
In-Plane Field Effects on the Dynamics of Domain Walls in Ultrathin Co Films With Perpendicular Anisotropy
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垂直各向异性超薄钴薄膜中畴壁动力学的面内场效应
DOI：
10.1109/tmag.2010.2045740
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发表时间：
2010
影响因子：
2.1
通讯作者：
C. Chien
中科院分区：
文献类型：
--
作者：
Y. Kabanov;Y. Iunin;V. Nikitenko;A J Shapiro;R. Shull;L. Zhu;C. Chien
我们研究了如何应用的面内场的影响的域成核活动和畴壁速度的不对称性，揭示了先前在垂直各向异性的Cr2O3 Co薄膜。它是建立的不对称生存和新的影响下产生的应用程序的一个额外的领域平行于膜表面。研究发现，在外加平面场作用下，圆形畴壁不同部分的迁移率变化很大。与低阻尼石榴石薄膜不同，在平面场作用下，铁电钴薄膜的畴壁速度显著减慢。垂直于面内场方向移动的畴壁部分相对于畴壁的其他部分减速最多。此外，畴壁部分在与面内场相同的方向和相反的方向上移动，具有相当不同的速度。当面内场方向改变时，磁畴壁速度的各向异性随场旋转。一个新的不对称的畴壁速度在平面内和垂直场的存在下观察时，垂直场是反向的。
We studied how the application of an in-plane field affects the asymmetries of the domain nucleation activity and domain wall velocity revealed previously in ultrathin Co films with perpendicular anisotropy. It is established that the asymmetries survive and new effects arise under application of an additional field parallel to the film surface. It is found that the mobility of different parts of a circular domain wall vary drastically under application of additional planar field. The domain wall velocity in ultrathin Co films, unlike that in low-damping garnet films, slows down dramatically upon application of a planar field. The domain wall part that is moving perpendicular to the in-plane field direction decelerates most relative to the other parts of the domain wall. Moreover, domain wall parts moving in the same direction as the in-plane field and in the opposite direction have considerably different velocities. This anisotropy of domain wall velocity rotates with the field as the in-plane field direction is varied. A new asymmetry in the domain wall velocity in the presence of both in-plane and perpendicular fields is observed when the perpendicular field is reversed.