Growth of single crystal bcc α‐Fe on ZnSe via molecular beam epitaxy
Growth of single crystal bcc α‐Fe on ZnSe via molecular beam epitaxy
复制标题
通过分子束外延在 ZnSe 上生长单晶 bcc α-Fe
DOI：
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发表时间：
1986
期刊：
影响因子：
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通讯作者：
F. Kovanic
中科院分区：
文献类型：
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作者：
G. A. Prinz;B. Jonker;J. Krebs;J. M. Ferrari;F. Kovanic
采用分子束外延方法在GaAs（001）衬底上生长了高质量的bcc α-Fe单晶薄膜。这些薄膜的特征在于反射高能电子衍射，俄歇电子能谱，铁磁共振（FMR），和振动样品磁强计。FMR线宽和测量的矫顽场显着小于以前报道的单晶铁膜。
Molecular beam epitaxy methods have been used to grow high quality single crystal films of bcc α‐Fe on fcc (zinc blende) ZnSe (001) epilayers on GaAs (001). These films were characterized by reflection high‐energy electron diffraction, Auger electron spectroscopy, ferromagnetic resonance (FMR), and vibrating sample magnetometry. The FMR linewidth and measured coercive field are significantly smaller than previously reported for single crystal Fe films.