Minute SiGe quantum dots on Si(001) by a kinetic 3D island mode.
Minute SiGe quantum dots on Si(001) by a kinetic 3D island mode.
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通过动态 3D 岛模式在 Si(001) 上形成微小的 SiGe 量子点。
DOI：
10.1103/physrevlett.87.136104
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发表时间：
2001
影响因子：
8.6
通讯作者：
B. Wassermann
中科院分区：
文献类型：
--
作者：
R. Koch;G. Wedler;J. Schulz;B. Wassermann
我们通过实时应力测量和沉积温度下的原位扫描隧道显微镜研究了 Si(x)Ge(1-x)/Si(001) 的初始生长阶段，其中混合效应仍然很小（<或=900 K）。 Ge/Si(001) 是众所周知的 Stranski-Krastanow 体系，而 SiGe 合金薄膜的生长在 Si 含量高于 20% 时切换为 3D 岛模式。获得的岛很小（几纳米），形状均匀，并且表现出窄的尺寸分布，使其成为未来量子点器件的有希望的候选者。
We investigated the initial growth stages of Si(x)Ge(1-x)/Si(001) by real time stress measurements and in situ scanning tunneling microscopy at deposition temperatures, where intermixing effects are still minute (< or =900 K). Whereas Ge/Si(001) is a well known Stranski-Krastanow system, the growth of SiGe alloy films switches to a 3D island mode at Si content above 20%. The obtained islands are small (a few nanometers), are uniform in shape, and exhibit a narrow size distribution, making them promising candidates for future quantum dot devices.