Interface states at SiO 2 / 6 H − SiC ( 0001 ) interfaces observed by x-ray photoelectron spectroscopy measurements under bias: Comparison between dry and wet oxidation
Interface states at SiO 2 / 6 H − SiC ( 0001 ) interfaces observed by x-ray photoelectron spectroscopy measurements under bias: Comparison between dry and wet oxidation
复制标题
偏压下X射线光电子能谱测量观察到的SiO 2 / 6 H − SiC ( 0001 )界面的界面态：干氧化与湿氧化的比较
DOI：
10.1103/physrevb.67.115305
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发表时间：
2003
影响因子：
3.7
通讯作者：
Y. Nishioka
中科院分区：
文献类型：
--
作者：
H. Kobayashi;T. Sakurai;Masao Takahashi;Y. Nishioka
Interface states in almost the entire SiC band gap are observable by means of x-ray photoelectron spectroscopy (XPS) measurements under bias, although SiC is a wide-gap semiconductor having 2.9 eV band-gap energy. When a ${\mathrm{SiO}}_{2}$ layer is formed by wet oxidation at 1000 \ifmmode^\circ\else\textdegree\fi{}C on $6H\ensuremath{-}\mathrm{SiC}(0001)$ Si-faced surfaces, only a broad interface state peak is observed at \ensuremath{\sim}2 eV above the SiC valence-band maximum (VBM), while for dry oxidation at the same temperature, an additional sharp interface state peak is caused at 1.8 eV above the VBM. When the wet-oxidation temperature is increased to 1150 \ifmmode^\circ\else\textdegree\fi{}C, this 1.8-eV interface-state peak also appears. The concentration of graphitic carbon at the ${\mathrm{SiO}}_{2}/\mathrm{SiC}$ interface is found to increase with the heat treatment temperature. The 1.8-eV interface-state peak is tentatively attributed to graphitic carbon with a special structure near the interface. On the other hand, the broad 2-eV interface-state peak is attributed to Si dangling bonds at the interface. Without the 1.8-eV interface-state peak, current-voltage $(I\ensuremath{-}V)$ curves measured under x-ray irradiation deviate only slightly from the ideal $I\ensuremath{-}V$ curve (\ensuremath{\sim}0.4 V), while with this peak, the deviation becomes much larger (\ensuremath{\sim}0.8 V). XPS measurements under bias show that the $I\ensuremath{-}V$ curves under x-ray irradiation are determined by the magnitude of band bending in SiC. Therefore, the deviation from the ideal $I\ensuremath{-}V$ curve is attributed to the accumulation of holes (i.e., minority carriers), generated by x-ray irradiation, at interface states with energies between the SiC and metal Fermi levels, causing a downward SiC band-edge shift and thus resulting in a decrease in the magnitude of band bending in SiC. This result demonstrates that the interface states affect $I\ensuremath{-}V$ characteristics by a static effect (i.e., interface state charges), not by a dynamical effect (i.e., electron-hole recombination at the interface states).
Interface states in almost the entire SiC band gap are observable by means of x-ray photoelectron spectroscopy (XPS) measurements under bias, although SiC is a wide-gap semiconductor having 2.9 eV band-gap energy. When a ${\mathrm{SiO}}_{2}$ layer is formed by wet oxidation at 1000 \ifmmode^\circ\else\textdegree\fi{}C on $6H\ensuremath{-}\mathrm{SiC}(0001)$ Si-faced surfaces, only a broad interface state peak is observed at \ensuremath{\sim}2 eV above the SiC valence-band maximum (VBM), while for dry oxidation at the same temperature, an additional sharp interface state peak is caused at 1.8 eV above the VBM. When the wet-oxidation temperature is increased to 1150 \ifmmode^\circ\else\textdegree\fi{}C, this 1.8-eV interface-state peak also appears. The concentration of graphitic carbon at the ${\mathrm{SiO}}_{2}/\mathrm{SiC}$ interface is found to increase with the heat treatment temperature. The 1.8-eV interface-state peak is tentatively attributed to graphitic carbon with a special structure near the interface. On the other hand, the broad 2-eV interface-state peak is attributed to Si dangling bonds at the interface. Without the 1.8-eV interface-state peak, current-voltage $(I\ensuremath{-}V)$ curves measured under x-ray irradiation deviate only slightly from the ideal $I\ensuremath{-}V$ curve (\ensuremath{\sim}0.4 V), while with this peak, the deviation becomes much larger (\ensuremath{\sim}0.8 V). XPS measurements under bias show that the $I\ensuremath{-}V$ curves under x-ray irradiation are determined by the magnitude of band bending in SiC. Therefore, the deviation from the ideal $I\ensuremath{-}V$ curve is attributed to the accumulation of holes (i.e., minority carriers), generated by x-ray irradiation, at interface states with energies between the SiC and metal Fermi levels, causing a downward SiC band-edge shift and thus resulting in a decrease in the magnitude of band bending in SiC. This result demonstrates that the interface states affect $I\ensuremath{-}V$ characteristics by a static effect (i.e., interface state charges), not by a dynamical effect (i.e., electron-hole recombination at the interface states).