Enhanced ferroelectric properties of self-polarized BiFe0.86Ti0.12Zn0.02O3 thin films on tin oxide-coated glass substrates
Enhanced ferroelectric properties of self-polarized BiFe0.86Ti0.12Zn0.02O3 thin films on tin oxide-coated glass substrates
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DOI：
10.1007/s10854-015-3212-z
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发表时间：
2015-05
期刊：
影响因子：
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通讯作者：
Chengcheng Qiu;G. Hu;Yuanyuan Zhao;P. Du
中科院分区：
文献类型：
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作者：
Chengcheng Qiu;G. Hu;Yuanyuan Zhao;P. Du
采用化学溶液沉积法在镀铟锡氧化物玻璃衬底上成功制备了BiFe0.86Ti0.12Zn0.02O3(BFTZO)薄膜。研究了薄膜的结构、介电性能和铁电性能随退火温度的变化规律。随退火温度的不同，BFTZO薄膜均出现不同程度的(012)衍射峰。掺入高掺杂量的Ti4+离子(12%)可显著降低漏电流。此外，所有的BFTZO薄膜都是纯相的，并且是自极化的，这使得它在微电子机械系统中有很好的应用前景。在500℃下热处理的薄膜具有最大的介电常数540，这使得它在数据存储应用中具有广阔的应用前景。
The BiFe0.86Ti0.12Zn0.02O3(BFTZO) thin films were successfully prepared on indium tin oxide-coated glass substrates by chemical solution deposition method. Structures, dielectric and ferroelectric properties of thin films were investigated as functions of annealing temperature. All the BFTZO thin films exhibit a varying degree of (012) diffraction peak depending on the annealing temperature. The leakage currents are considerably reduced by doping Ti4+(12 %) with a high doping content. Moreover, all the BFTZO thin films are phase-pure, and self-polarized, which makes it promising for applications in microelectromechanical system. The film annealed at 500 °C exhibits the largest dielectric constant of 540, which make it to be a promising candidate for applications of data storage.