Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs
Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs
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DOI：
10.1109/jeds.2017.2772346
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发表时间：
2018-12-01
影响因子：
2.3
通讯作者：
Enz, Christian
中科院分区：
文献类型：
--
作者：
Jazaeri, Farzan;Zhang, Chun-Min;Enz, Christian
本文建立了基于电荷的非掺杂对称双栅MOSFET界面电荷和氧化层陷阱电荷的综合预测模型。该模型基本上不涉及拟合参数，而是对氧化物和Si/氧化物界面陷阱的第一性原理计算。这种基于电荷的方法代表着向先进场效应器中的电离剂量和老化效应的紧凑建模迈出的重要一步。通过与TCAD数值模拟的广泛比较，证实了这种方法的可靠性，而解析公式有助于理解与特定技术有关的现象的最相关参数。该模式证实了其对所有作业区域的有效性，即从深度枯竭到强逆温以及从线性到饱和。
In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations of both oxide and Si/oxide interface trapping. This charge-based approach represents an essential step toward compact modeling of ionizing dose and aging effects in advanced field effect devices. The soundness of this approach is confirmed by extensive comparisons with numerical TCAD simulations, while the analytical formulation helps understanding the most relevant parameters of the phenomena with respect to a specific technology. The model confirms its validity for all regions of operation, i.e., from deep depletion to strong inversion and from linear to saturation.