Effect of AlN Buffer Layer on AlGaN/α-Al2O3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy
Effect of AlN Buffer Layer on AlGaN/α-Al2O3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy
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AlN缓冲层对金属有机气相外延AlGaN/α-Al2O3异质外延生长的影响
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
I. Akasaki
中科院分区：
文献类型：
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作者：
Y. Koide;N. Itoh;K. Itoh;N. Sawaki;I. Akasaki
用双晶X射线衍射仪研究了在蓝宝石衬底上生长的Al_xGa_(1-x)N(0≦x≦_(0.4))薄膜由许多不同取向的马赛克晶体组成。通过先前沉积AlN缓冲层，可以显著减小这种取向波动，并且可以显著改善薄膜的表面形态(平整度和均匀性)。提出了一个能解释AlN缓冲层对AlGaN薄膜表面形貌和结晶质量影响的唯象模型。
AlxGa1-xN(0≦x≦0.4) films grown on sapphires are found to be composed of many mosaic crystallites with various orientations by means of double-crystal X-ray diffractometry. This fluctuation of orientation can be considerably reduced and the surface morphology (smoothness and uniformity) of the film can be remarkably improved by the preceding deposition of the AlN buffer layers. A phenomenological model, which can explain the effect of the AlN buffer layer on the surface morphology and the crystalline quality of AlGaN films, is proposed.