Optical anisotropy of InGaAs∕Ga(As,P) quantum dots grown on GaAs (311)B substrates
Optical anisotropy of InGaAs∕Ga(As,P) quantum dots grown on GaAs (311)B substrates
复制标题
GaAs (311)B 衬底上生长的 InGaAs∕Ga(As,P) 量子点的光学各向异性
DOI：
10.1063/1.2817239
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发表时间：
2007
影响因子：
4
通讯作者：
A. Norman
中科院分区：
文献类型：
--
作者：
Yi Zhang;A. Pancholi;V. Stoleru;M. Hanna;A. Norman
在（311）B GaAs衬底上，通过在相邻量子点层之间引入应变补偿Ga（As，P）势垒，生长了由多层InGaAs量子点（QD）组成的高质量结构。点的光学各向异性进行了研究，通过偏振光致发光（PL）测量的表面和边缘的样品。所观察到的点的面内光学各向异性可以最终与点应变弛豫的方向和程度相关。对于生长在（311）B GaAs上的量子点，边缘发射PL的横电模式与样品表面偏离约5°。这可能是由于倾斜的垂直取向和形状的不对称性的点所导致的基板取向。
Very high quality structures consisting of multilayer InGaAs quantum dots (QDs) were grown on (311)B GaAs by introducing strain-compensated Ga(As,P) barriers between adjacent QD layers. The dot optical anisotropy was studied by performing polarized photoluminescence (PL) measurements both on the surface and the edges of the samples. The observed in-plane optical anisotropy of the dots can be eventually related to the direction and the extent of the dot strain relaxation. The transverse electric mode of the edge-emitted PL showed about 5° deviation from the sample surface for the dots grown on (311)B GaAs. This can be attributed to the tilted vertical alignment and the shape asymmetry of dots resulted from the substrate orientation.