Strong Temperature Dependence of Extraordinary Magnetoresistance Correlated to Mobility in a Two-Contact Device
Strong Temperature Dependence of Extraordinary Magnetoresistance Correlated to Mobility in a Two-Contact Device
复制标题
与两触点器件中的迁移率相关的非凡磁阻的强温度依赖性
DOI：
10.1143/apex.5.033002
复制
发表时间：
2012
影响因子：
2.3
通讯作者：
J. Kosel
中科院分区：
文献类型：
--
作者：
Jian Sun;S. B. Patil;Y. Soh;J. Kosel
制备了一种双接触的超磁电阻(EMR)器件，并对其在不同温度、不同方向磁场作用下的特性进行了研究。在整个温度范围内发现了很大的性能变化，这是由于EMR效应对迁移率的强烈依赖。在垂直电场作用下，该器件在75K时的灵敏度最高，为562Ω/T。由于半导体和金属分流器之间的重叠，该器件对平面场也很敏感，但对垂直场的灵敏度较低，约为20%到25%。
A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562 Ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields.