Photoluminescence polarization in individual CdSe nanowires
Photoluminescence polarization in individual CdSe nanowires
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DOI：
10.1103/physrevb.74.153402
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发表时间：
2006-10
影响因子：
3.7
通讯作者：
C. Shan;Zhi-feng Liu;S. Hark
中科院分区：
文献类型：
--
作者：
C. Shan;Zhi-feng Liu;S. Hark
研究了平行于和垂直于纤锌矿结构c轴生长的单个CdSe纳米线的光致发光PL谱的偏振。纳米线的激发和发射都表现出很强的偏振依赖性。当激发场极化方向平行于纳米线的长轴时，无论其生长方向如何，都可以获得最大的PL强度。纳米线的发射极化也不依赖于生长方向，而是主要由纳米线的细长形状决定。极化的起源被认为主要是由于CdSe纳米线与其周围环境之间的介电常数的大对比，而来自晶体结构的对称性的贡献可以忽略不计。
The polarization of the photoluminescence PL spectra of individual CdSe nanowires grown parallel and perpendicular to the c axes of the wurtzite structure was studied. Both the excitation and emission of the nanowires show strong polarization dependence. Maximum PL intensity is obtained when the excitation field polarizes parallel to the long axes of the nanowires, regardless of their growth directions. The emission polarization of the nanowires also does not depend on the growth direction, but is mainly determined by the elongated shape of the nanowires. The origin of the polarization is considered mainly a result of the large contrast in dielectric constants between the CdSe nanowires and their surroundings, while the contribution from the symmetry of the crystal structure is negligible.