Time-resolved photoluminescence spectroscopy of individual te impurity centers in ZnSe
Time-resolved photoluminescence spectroscopy of individual te impurity centers in ZnSe
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ZnSe 中单个 te 杂质中心的时间分辨光致发光光谱
DOI：
10.1103/physrevb.73.081306
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发表时间：
2006
影响因子：
3.7
通讯作者：
C. Shih
中科院分区：
文献类型：
--
作者：
A. Muller;P. Bianucci;C. Piermarocchi;M. Fornari;I. Robin;R. André;C. Shih
用时间分辨光致发光(PL)光谱分别探测了{ZnSe}中的碲杂质中心。具有超低空间密度的分辨率受限峰来源于激子与孤立的最近邻等电子Te对$({\mathm{Te}}_{2})$的复合。这一解释得到了从头计算的支持。峰显示出反聚束的光子发射和沿[110]$和$[Oblline{1}10]$极化的二重态结构。时间分辨光致发光衰变的温度依赖性暴露了暗激子态，这间接影响了单个精细结构分裂激子的辐射复合。
Tellurium impurity centers in $\mathrm{ZnSe}$ were individually probed with time-resolved photoluminescence (PL) spectroscopy. Resolution-limited peaks with an ultralow spatial density originate in the recombination of excitons deeply bound to isolated nearest-neighbor isoelectronic Te pairs $({\mathrm{Te}}_{2})$. This interpretation is supported by ab initio calculations. The peaks reveal antibunched photon emission and a doublet structure polarized along $[110]$ and $[\overline{1}10]$. The temperature dependence of the time-resolved PL decay exposes the dark excitonic states which indirectly affect the radiative recombination of single fine-structure split excitons.