Kinetic analysis of C49‐TiSi2 and C54‐TiSi2 formation at rapid thermal annealing rates
Kinetic analysis of C49‐TiSi2 and C54‐TiSi2 formation at rapid thermal annealing rates
复制标题
DOI：
10.1063/1.352018
复制
发表时间：
1992-11
影响因子：
3.2
通讯作者：
L. Clevenger;J. Harper;C. Cabral;C. Nobili;G. Ottaviani;R. Mann
中科院分区：
文献类型：
--
作者：
L. Clevenger;J. Harper;C. Cabral;C. Nobili;G. Ottaviani;R. Mann
我们已经使用原位电阻与温度测量来证明，以高达3000 °C/min的速率加热的多晶硅上的60 nm钛薄膜总是在低电阻率面心正交C54-TiSi 2相之前形成高电阻率基心正交C49-TiSi 2。对相变温度随加热速率变化的动力学分析表明，当在相同的退火循环中形成时，形成C49-TiSi 2和C54-TiSi 2的活化能分别为2.1±0.2和3.8±0.5 eV。与C49-TiSi 2相比，C54-TiSi 2形成的更高活化能表明，在非常高的加热速率和退火温度下，C49-TiSi 2在C54-TiSi 2之前的形成可能被完全或部分绕过。
We have used in situ resistance versus temperature measurements to demonstrate that a 60 nm titanium thin film on polycrystalline silicon heated at rates up to 3000 °C/min always forms high‐resistivity base‐centered orthorhombic C49‐TiSi2 before the low‐resistivity face‐centered orthorhombic C54‐TiSi2 phase. Kinetic analysis of the shift in transformation temperatures with heating rate indicates that the activation energies for the formation of C49‐TiSi2 and C54‐TiSi2 are 2.1±0.2 and 3.8±0.5 eV, respectively, when formed during the same annealing cycle. The higher activation energy of formation of C54‐TiSi2 as compared to C49‐TiSi2 suggests that under very high heating rates and annealing temperatures, the formation of C49‐TiSi2 before C54‐TiSi2 might be completely or partially bypassed.