Fine Pattern Replication Using ETS-1 Three-Aspherical Mirror Imaging System
Fine Pattern Replication Using ETS-1 Three-Aspherical Mirror Imaging System
复制标题
使用 ETS-1 三非球面镜成像系统进行精细图案复制
DOI：
10.1143/jjap.41.4105
复制
发表时间：
2001
影响因子：
1.5
通讯作者：
Shinji Okazaki
中科院分区：
文献类型：
--
作者：
Takeo Watanabe;H. Kinoshita;K. Hamamoto;M. Hosoya;T. Shoki;H. Hada;H. Komano;Shinji Okazaki
研制了ETS-1型三非球面镜成像系统工程试验台。在静态曝光中使用Cr掩模的精细图案复制中，在10 mm×2 mm的曝光区域中复制抗蚀剂图案，其中线和间隔图案宽度为60 nm，隔离线图案宽度为40 nm，孔图案宽度为150 nm。扫描曝光时，在10 mm×10 mm的曝光面积内，以60 nm的线宽和线宽复制光刻胶图形。我们还在NewSUBARU装置的BL 10光束线上构建了多层膜反射率测量系统。可以测量ULE 6025掩模反射率的全场。在此基础上，研制了低释气的化学放大型抗蚀剂EUV 010。
The engineering test stand ETS-1 three-aspherical-mirror imaging system has been developed. In the fine pattern replication using a Cr mask in static exposure, the resist pattern is replicated in the exposure area of 10 mm×2 mm with the line and space pattern width of 60 nm, the isolated line pattern width of 40 nm, and the hole pattern width of 150 nm. For the scanning exposure, the resist pattern is replicated with the line and space pattern width of 60 nm in an exposure area of 10 mm×10 mm. We have also constructed a multilayer reflectivity measurement system at the BL10 beamline of the NewSUBARU facility. The full field of ULE6025 mask reflectivity can be measured. Furthermore, the low-outgassing chemically amplified resist EUV010 has been developed based on KrF chemically amplified resist.