QUANTUM CONFINEMENT AND LIGHT-EMISSION IN SIO2/SI SUPERLATTICES
QUANTUM CONFINEMENT AND LIGHT-EMISSION IN SIO2/SI SUPERLATTICES
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DOI：
10.1038/378258a0
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发表时间：
1995-11-16
期刊：
影响因子：
64.8
通讯作者：
BARIBEAU, JM
中科院分区：
文献类型：
--
作者：
LU, ZH;LOCKWOOD, DJ;BARIBEAU, JM
光子器件在信息和通信技术中变得越来越重要。但是，将光子学与硅基微电子学集成的尝试受到硅具有间接带隙的事实的阻碍，这阻碍了有效的电子-光子能量转换。已经使用SiGe和SiC合金以及Si/Ge超晶格的能带结构工程，并通过利用纳米级颗粒和微晶中的量子限制效应来制造发光硅基材料（1-3）。硅可以被电化学蚀刻成高度多孔的形式，以高量子产率发光，这一发现（4，5）为深入研究后一种方法开辟了道路（6-12）。在这里，我们报告的制造，通过分子束外延，定义明确的硅和SiO2，通过光致发光发射可见光的超晶格。我们表明，这种光发射可以解释在二维硅层中的电子的量子限制。这些超晶格结构是坚固的，并且与标准硅技术兼容。
Photonic devices are becoming increasingly important in information and communication technologies. But attempts to integrate photonics with silicon-based microelectronics are hampered by the fact that silicon has an indirect band gap, which prevents efficient electron-photon energy conversion. Light-emitting silicon-based materials have been made using band-structure engineering of SiGe and SiC alloys and Si/Ge superlattices, and by exploiting quantum-confinement effects in nanoscale particles and crystallites(1-3). The discovery(4,5) that silicon can be etched electrochemically into a highly porous form that emits light with a high quantum yield has opened up the latter approach to intensive study(6-12). Here we report the fabrication, by molecular-beam epitaxy, of well-defined superlattices of silicon and SiO2, which emit visible light through photoluminescence. We show that this light emission can be explained in terms of quantum confinement of electrons in the two-dimensional silicon layers. These superlattice structures are robust and compatible with standard silicon technology.